MB85RC256V FRAM Breakout Board, Memory IC Development Tools with I2C Interface, 32KB Non - Volatile Ferroelectric RAM Module for Low - Power Data
NIO 709
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Ultra-High Endurance: This MB85RC256V FRAM Breakout Board supports up to 10 trillion read/write cycles under normal conditions, far exceeding traditional EEPROM or Flash memory.
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Detalles de producto
| Brand | ZZIOLYTHICTRADING |
| Built-In Media | no |
| Number of Items | 1 |
| Manufacturer | ZZIOLYTHICTRADING |
| Model Number | ZZIOLYTHICTRADINGtwu028h65z |
| Mfr Part Number | ZZIOLYTHICTRADINGtwu028h65z |
| Included Components | no |
| Item Weight | 0.1 lbs (50 grams) |
DESCRIPCIÓN DEL PRODUCTO
MB85RC256V FRAM Breakout Board, Memory IC Development Tools with I2C Interface, 32KB Non - Volatile Ferroelectric RAM Module for Low - Power Data Logging, 2.7-5.5V
Preguntas y respuestas de los clientes
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Pregunta:
What applications is this FRAM Breakout Board ideal for?
Respuesta: It is perfect for IoT sensors, medical devices, and battery-powered data loggers. -
Pregunta:
How does this memory module outperform traditional memory?
Respuesta: It offers significantly higher read/write cycles and faster data access without wear-out concerns. -
Pregunta:
Is it compatible with Arduino and other platforms?
Respuesta: Yes, it is designed for seamless integration with Arduino and other microcontroller systems.
ZZIOLYTHICTRADING ZZIOLYTHICTRADINGtwu028h65z Editorial Review
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NIO 709
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características y beneficios
- Supports up to 10 trillion read/write cycles for exceptional endurance.
- Instant read/write capability with data retention for up to 95 years.
- Ideal for low-power and portable systems with a voltage range of 2.7V to 5.5V.
- Employs ferroelectric RAM technology for fast, energy-efficient performance.
- Features a standard I2C interface for easy integration with microcontrollers.
- Includes a complete kit for rapid prototyping with various platforms.
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